8035 TGA8035-SCC gain block amplifier l 6 to 18 - ghz fr equency range l 13 - db typical gain l 2.2:1 typical input/output swr l 12.5 - dbm typical output power at 1 -db gain compr ession l 5 - db typical noise figure l 2,4892 x 2,0574 x 0,1143 mm (0.098 x 0.081 x 0.0045 in.) the triquint tga8035 - scc is a two - stage gaas monolithic amplifier designed for use as a broadband general-purpose gain block. t wo 300 - m gate - width fets provide a 13 - db typical gain and a 5- db noise figure from 6 to 18- ghz. typical output power at 1 - db gain compression is 12.5 - dbm. shunt feedback is used around each active device to improve gain flatness and standing - wave ratio (swr). ground is provided to the circuitry through vias to the backside metallization. the TGA8035-SCC amplifier is suitable for a variety of broadband electronic warfare (ew) applications. the combination of gain, power, and noise figure makes this device an exceptional post amplifier following a low-noise amplifier. bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as thermocompression and thermosonic wire- bonding processes. the tga8035 - scc is supplied in chip form and is readily assembled using automated equipment. photo enlargement description t r i q u i n t s e m i c o n d u c t o r , i n c . triquint semiconductor, inc. texas facilities (972) 994-8465 ?www.triquint.com
TGA8035-SCC 2 typical small-signal power gain 0 2 4 6 8 10 12 14 16 18 20 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) gain (db) v d1 , v d2 = 5 v i d1 = 50% i dss1 i d2 = 50% i dss2 t a = 25? c typical noise figure 0 1 2 3 4 5 6 7 8 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) noise figure (db) v d1 , v d2 = 5 v i d1 = 50% i dss1 i d2 = 50% i dss2 t a = 25? c typical output power p 1db 0 2 4 6 8 10 12 14 16 18 20 6 7 8 9 10 11 12 13 14 15 16 17 18 fre q uenc y ( ghz ) output power (dbm) v d1 , v d2 = 5 v i d1 = 50% i dss1 i d2 = 50% i dss2 t a = 25? c v d1 , v d2 = 5 v i d1 = 50% i dss1 i d2 = 50% i dss2 t a = 25?c v d1 , v d2 = 5 v i d1 = 50% i dss1 i d2 = 50% i dss2 t a = 25?c v d1 , v d2 = 5 v i d1 = 50% i dss1 i d2 = 50% i dss2 t a = 25?c triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
TGA8035-SCC 3 typical return loss absolute maximum ratings 0 2 4 6 8 10 12 14 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) return loss (db) input output v d1 , v d2 = 5 v i d1 = 50% i dss i d1 = 50% i dss t a = 25? c drain supply voltage, v d1 , v d2 ................................................................................................................ 8 v drain supply voltage range with r espect to negative supply voltage, v d1 - v g1 , v d2 - v g2 .................... 0 v to 8 v g1 , v g2 ............................................................ .......................... 0 v to - 5 v .................................................................................................................. i dss1 negative supply voltage range, v positive supply current, i d1 positive supply current, i d2 .................................................................................................................. i dss2 power dissipation at (or below) 25 c base-plate temperature, p d * ...................................................... 1.4 w input continuous wave power, p in .................................................................................................... 20 dbm operating channel temperature, t ch ** .............................................................................................. 150 c mounting temperature (30 sec), t m .................................................................................................... 320 c storage temperature range, t stg ............................................................................................ - 65 to 150 c ratings over operating channel temperature range, t ch (unless otherwise noted) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under rf characteristics is not implied. exposure to absolute maximum rated conditions for extended periods may affect device reliability. * for operation above 25 c base - plate temperature, derate linearly at the rate of 3 mw/ c. * operating channel temperatur e (t ch ) directly affects the device mttf. for maximum life, it is recommended that channel temperature be maintained at the lowest possible level. v d1 , v d2 = 5 v i d1 = 50% i dss1 i d2 = 50% i dss2 t a = 25c input output triquint semiconductor, inc. ? texas facilities ? (972) 995-8465 ? www.triquint.com
TGA8035-SCC 4 typical s-parameters frequency s 11 s 21 s 12 22 gain (ghz) mag ang(? ) s mag ang(? ) mag ang(? ) mag ang(? ) (db) 5.0 0.54 75 2.34 55 0.013 109 0.59 73 7.4 5.5 0.35 71 3.49 9 0.018 77 0.47 61 10.9 6.0 0.31 75 4.33 -34 0.021 46 0.39 49 12.7 6.5 0.31 62 4.89 -73 0.022 15 0.33 33 13.8 7.0 0.28 34 5.16 -108 0.022 -15 0.28 14 14.2 7.5 0.24 - 7 5.28 -141 0.021 -44 0.25 - 7 14.5 8.0 0.25 - 53 5.27 -172 0.021 -75 0.24 - 31 14.4 8.5 0.30 -91 5.05 161 0.020 -102 0.26 - 52 14.1 9.0 0.37 -117 4.92 136 0.019 -124 0.30 - 71 13.8 9.5 0.42 -138 4.82 112 0.021 -144 0.34 - 88 13.7 10.0 0.46 -154 4.71 90 0.021 -164 0.38 -102 13.5 10.5 0.48 -168 4.68 69 0.020 177 0.42 -115 13.4 11.0 0.48 178 4.73 48 0.020 174 0.43 -125 13.5 11.5 0.46 166 4.91 27 0.021 161 0.45 -134 13.8 12.0 0.43 153 5.13 5 0.021 151 0.46 -144 14.2 12.5 0.38 140 5.28 -18 0.021 141 0.45 -154 14.5 13.0 0.33 129 5.42 -41 0.021 132 0.43 -164 14.7 13.5 0.27 123 5.52 -64 0.021 120 0.41 -173 14.8 14.0 0.25 118 5.68 -89 0.020 109 0.39 178 15.1 14.5 0.24 112 5.61 -113 0.017 97 0.38 167 15.0 15.0 0.24 100 5.59 -138 0.013 96 0.35 154 14.9 15.5 0.22 89 5.40 -163 0.014 94 0.32 143 14.6 16.0 0.21 81 5.10 174 0.015 80 0.31 136 14.1 16.5 0.24 67 5.05 153 0.012 47 0.33 123 14.1 17.0 0.24 46 5.12 129 0.007 44 0.32 114 14.2 17.5 0.23 27 5.06 103 0.010 28 0.34 108 14.1 18.0 0.28 -4 5.27 78 0.005 -38 0.35 93 14.4 18.5 0.35 -48 5.49 46 0.007 -17 0.33 83 14.8 19.0 0.41 -92 4.91 9 0.012 -85 0.29 73 13.8 19.5 0.53 i d1 = 50% i dss1 , i d2 = 50% i dss2 , v d1 , v d2 = 5 v, t a = 25?c reference planes for s-parameter data include bond wires as specified in the recommended assembly diagram. 20.0 0.68 -149 -122 4.01 3.37 -23 -55 0.012 0.008 -152 156 0.19 0.18 75 100 12.1 10.5 triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
TGA8035-SCC 5 dc characteristics rf characteristics parameter test conditions min max unit i dss1 total zeroegateevoltage drain current at saturation v ds = 0.5 v to 3.5 v, 36 108 ma for fet1 * v gs = 0 i dss2 total zeroegateevoltage drain current at saturation v ds = 0.5 v to 3.5 v, 36 108 ma for fet2 ** v gs = 0 parameter test conditions typ unit g p smallesignal power gain f = 6 to 18 g hz 13 db swr(in) input standingewave ratio f = 6 to 18 ghz 2.2:1 ? swr(out) output standingewave ratio f = 6 to 18 g hz 2.2:1 ? p 1db output power at 1edb gain compression f = 6 to 18 g hz 12.5 dbm nf noise figure f = 6 to 18 ghz 5 db t a = 25?c * v ds1 for i dss1 is drain voltage between 0.5 v and 3.5 v at which drain current is highest at dc autoprobe. ** v ds2 for i dss2 is drain voltage between 0.5 v and 3.5 v at which drain current is highest at dc autoprobe. v d1, v d2 = 5 v, v g1 = - 1 v, v g2 = - 1 v, t a = 25?c parameter test conditions test conditions f et mmic* unit 25?c base, 80?c channel** 152.5 76.3 r jc thermal resistance, i d =72 ma, v d =5v 85?c base, 151?c channel** 184.7 92.4 ?c/w channeletoebackside 100?c base, 169?c channel** 192.8 96.4 * mmic thermal resistance is the peak fet temperature rise divided by the total mmic dissipated power (.72 w). ** hottest gate channel (center of either fet). equivalent schematic v g2 v d1 fet 2 300 m fet 1 300 m v d2 v g1 rf input rf output thermal information triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
TGA8035-SCC 6 recommended assembly diagram rf output rf input 25 0.01 f 0.01 f v g1 ,v g2 v d1 ,v d2 rf connections: bond using two 1-mil diameter, 20 to 25 - mil- length gold bond wires at both rf input and rf output for optimum rf performance. close placement of external components is essential to stability. typical bias network tga8035 6 5 4 3 v g1 ,v g2 r bypass 2 1 rf output rf input c bypass c bypass v d1 ,v d2 triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
7 TGA8035-SCC mechanical drawing 1,4681 (0.0578) 0,2108 (0.0083) 2,3114 (0.0910) 0,1803 (0.0071) 1,4656 (0.0577) 0,2108 (0.0083) 0,4039 (0.0159) 0,9246 (0.0364) 1,8034 (0.0710) 2,1590 (0.0850) 2,4892 (0.0980) 0 0 65 43 2 1 2,0574 (0.081) units: millimeters (inches) thickness: 0,1143 (0.045) (reference only) chip edge to bond pad dimensions are shown to center of bond pad. chip size tolerance: 0,0508 (0.002) bond pad #1 (rf input): 0,0940 x 0,2362 (0.0037 x 0.0093) bond pad #2 (rf output): 0,0991 x 0,2413 (0.0039 x 0.0095) bond pad #3 (v d2 ): 0,2286 x 0,1143 (0.0090 x 0.0045) bond pad #4 (v g2 ): 0,2286 x 0,1143 (0.0090 x 0.0045) bond pad #5 (v d1 ): 0,2286 x 0,1143 (0.0090 x 0.0045) bond pad #6 (v g1 ): 0,2286 x 0,1143 (0.0090 x 0.0045) triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
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